Datasheet Details
| Part number | A1516 |
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| Manufacturer | Inchange Semiconductor |
| File Size | 173.90 KB |
| Description | SILICON PNP TRANSISTOR |
| Datasheet |
 A1516 Datasheet
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| Part number | A1516 |
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| Manufacturer | Inchange Semiconductor |
| File Size | 173.90 KB |
| Description | SILICON PNP TRANSISTOR |
| Datasheet |
A1516 Datasheet
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·Collector-Emitter Breakdown Voltage: V(BR)CEO= -180V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3907 www.DataSheet4U.com APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A IB B Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature -1.2 A PC 130 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn Free Datasheet http://www.Datasheet4U.com INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SA1516 TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ;
IB= 0 -180 V www.DataSheet4U.com VCE(sat) Collector-Emitter Saturation Voltage IC= -8A;
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor.
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