IRGPS60B120KD
IRGPS60B120KD is INSULATED GATE BIPOLAR TRANSISTOR manufactured by IRF.
Features
- Low VCE (on) Non Punch Through IGBT Technology.
- Low Diode VF.
- 10µs Short Circuit Capability.
- Square RBSOA.
- Ultrasoft Diode Reverse Recovery Characteristics.
- Positive VCE (on) Temperature Coefficient.
- Super-247 Package.
VCES = 1200V VCE(on) typ. = 2.50V
@ VGE = 15V,
N-channel
Benefits
- Benchmark Efficiency for Motor Control.
- Rugged Transient Performance.
- Low EMI.
- Significantly Less Snubber Required
- Excellent Current Sharing in Parallel Operation.
ICE = 60A, Tj=25°C
Super-247™
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
Max.
1200 105 60 240 240 120 60 240 ± 20 595 238 -55 to +150 300 (0.063 in. (1.6mm) from case)
Units
°C
Thermal Resistance
Parameter
RθJC RθJC RθCS RθJA Wt Le Junction-to-Case
- IGBT Junction-to-Case
- Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Remended Clip Force Weight Internal Emitter Inductance (5mm from package)
Min.
- -
- -
- -
- -
- -
- - 20...
