IRGPS60B120KD - INSULATED GATE BIPOLAR TRANSISTOR

Product Overview

IRF

Part number	IRGPS60B120KD
Manufacturer	IRF
File Size	135.94 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGPS60B120KD Datasheet
Additional preview pages of the IRGPS60B120KD datasheet.

Low VCE (on) Non Punch Through IGBT Technology.
Low Diode VF.
10µs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient.
Super-247 Package. VCES = 1200V VCE(on) typ. = 2.50V G E @ VGE = 15V, N-channel Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Significantly Less.

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Published: Aug 23, 2005 |