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IRGPH50M - INSULATED GATE BIPOLAR TRANSISTOR

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Datasheet Details

Part number IRGPH50M
Manufacturer IRF
File Size 255.49 KB
Description INSULATED GATE BIPOLAR TRANSISTOR
Datasheet download datasheet IRGPH50M Datasheet

General Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

Overview

Previous Datasheet Index Next Data Sheet PD - 9.1030 IRGPH50M INSULATED GATE BIPOLAR.

Key Features

  • Short circuit rated - 10µs @ 125°C, V GE = 15V.
  • Switching-loss rating includes all "tail" losses.
  • Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve C Short Circuit Rated Fast IGBT VCES = 1200V G E VCE(sat) ≤ 2.9V @VGE = 15V, I C = 23A n-channel.

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