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- 9.1030
INSULATED GATE BIPOLAR TRANSISTOR
Features
- Short circuit rated
- 10µs @ 125°C, V GE = 15V
- Switching-loss rating includes all "tail" losses
- Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve
Short Circuit Rated Fast IGBT
VCES = 1200V
VCE(sat) ≤ 2.9V
@VGE = 15V, I C = 23A n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than parable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a...
