Datasheet Details
| Part number | IRGPH50FD2 |
|---|---|
| Manufacturer | IRF |
| File Size | 431.65 KB |
| Description | INSULATED GATE BIPOLAR TRANSISTOR |
| Datasheet | IRGPH50FD2_IRF.pdf |
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Overview: Previous Datasheet Index Next Data Sheet PD - 9.1120 IRGPH50FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY.
| Part number | IRGPH50FD2 |
|---|---|
| Manufacturer | IRF |
| File Size | 431.65 KB |
| Description | INSULATED GATE BIPOLAR TRANSISTOR |
| Datasheet | IRGPH50FD2_IRF.pdf |
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Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line.
They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, motor control, UPS and power supply applications.
TO-247AC Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM IF @ T C = 100°C IFM VGE PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
| Part Number | Description |
|---|---|
| IRGPH50F | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGPH50M | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGPH50MD2 | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGPH50S | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGPH20M | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGPH20S | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGPH30MD2 | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGPH30S | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGPH40 | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGPH40F | INSULATED GATE BIPOLAR TRANSISTOR |