IRGPC50F - INSULATED GATE BIPOLAR TRANSISTOR

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IRGPC50F INSULATED GATE BIPOLAR TRANSISTOR by IRF - Datasheet Preview — Datasheet preview – IRGPC50F

Datasheet Details

Part number	IRGPC50F
Manufacturer	IRF
File Size	269.66 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGPC50F Datasheet
Additional preview pages of the IRGPC50F datasheet.

Product details

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

Features

Switching-loss rating includes all "tail" losses.
Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve G E C Fast Speed IGBT VCES = 600V VCE(sat) ≤ 1.7V @VGE = 15V, I C = 39A n-channel.

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Published: Aug 23, 2005 |