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IRGPC40M Datasheet INSULATED GATE BIPOLAR TRANSISTOR

Manufacturer: IRF

Datasheet Details

Part number IRGPC40M
Manufacturer IRF
File Size 91.95 KB
Description INSULATED GATE BIPOLAR TRANSISTOR
Download IRGPC40M Download (PDF)

General Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

They provide substantial benefits to a host of high-voltage, highcurrent applications.

These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability.

Overview

Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.

Key Features

  • Short circuit rated - 10µs @ 125°C, V GE = 15V.
  • Switching-loss rating includes all "tail" losses.
  • Optimized for medium operating frequency (1 to 10kHz) G E C Short Circuit Rated Fast IGBT VCES = 600V VCE(typ) ≤ 2.0V @VGE = 15V, I C = 24A n-channel.