Datasheet Details
| Part number | IRGPC30F |
|---|---|
| Manufacturer | IRF |
| File Size | 111.73 KB |
| Description | INSULATED GATE BIPOLAR TRANSISTOR |
| Datasheet | IRGPC30F_IRF.pdf |
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Overview: PD - 9.1023 IRGPC30F INSULATED GATE BIPOLAR TRANSISTOR.
| Part number | IRGPC30F |
|---|---|
| Manufacturer | IRF |
| File Size | 111.73 KB |
| Description | INSULATED GATE BIPOLAR TRANSISTOR |
| Datasheet | IRGPC30F_IRF.pdf |
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|
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.
They provide substantial benefits to a host of high-voltage, highcurrent applications.
TO -2 4 7 AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
Compare IRGPC30F distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Part Number | Description |
|---|---|
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| IRGPC30S | INSULATED GATE BIPOLAR TRANSISTOR |
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| IRGPC20MD2 | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGPC20U | INSULATED GATE BIPOLAR TRANSISTOR |