IRGPC30F - INSULATED GATE BIPOLAR TRANSISTOR

IRF

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Datasheet Details

Part number: IRGPC30F
Manufacturer: IRF
File Size: 111.73 KB
Datasheet: IRGPC30F_IRF.pdf
Description: INSULATED GATE BIPOLAR TRANSISTOR

IRGPC30F Product details

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power.

Features

Switching-loss rating includes all "tail" losses.
Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve G E C Fast Speed IGBT VCES = 600V VCE(sat) ≤ 2.1V @VGE = 15V, IC = 17A n-channel.

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INSULATED GATE BIPOLAR TRANSISTOR IRF

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