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IRG4PH40UD2-EP - Insulated Gate Bipolar Transistor

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Datasheet Details

Part number IRG4PH40UD2-EP
Manufacturer IRF
File Size 231.09 KB
Description Insulated Gate Bipolar Transistor
Datasheet download datasheet IRG4PH40UD2-EP Datasheet

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PD - 95239 IRG4PH40UD2-EP • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast ultra-soft-recovery anti-parallel diode for use in resonant circuits • Industry standard TO-247AD package with extended leads • Lead-Free Features INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C UltraFast CoPack IGBT VCES = 1200V G E VCE(on) typ. = 2.43V @VGE = 15V, IC = 21A Benefits n-channel Applications • Higher switching frequency capability than competitive IGBTs • Highest efficiency available • HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics require less / no snubbing • Induction cooking systems • Microwave Ovens • Resonant Circuits TO-247AD Parameter Max.