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IRG4PH40UD2-E Datasheet, IRF

IRG4PH40UD2-E transistor equivalent, insulated gate bipolar transistor.

IRG4PH40UD2-E Avg. rating / M : 1.0 rating-13

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IRG4PH40UD2-E Datasheet

Features and benefits

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C UltraFast CoPack IGBT VCES = 1200V • UltraFast IGBT optimized for high operating frequencies up .

Application

• Higher switching frequency capability than competitive IGBTs • Highest efficiency available • HEXFRED diodes optimize.

Image gallery

IRG4PH40UD2-E Page 1 IRG4PH40UD2-E Page 2 IRG4PH40UD2-E Page 3

TAGS
IRG4PH40UD2-E
Insulated
Gate
Bipolar
Transistor
IRG4PH40UD2-EP
IRG4PH40UD2
IRG4PH40UD2PBF
IRF
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