• Part: IRG4PC50W
  • Description: INSULATED GATE BIPOLAR TRANSISTOR
  • Category: Transistor
  • Manufacturer: IRF
  • Size: 157.33 KB
IRG4PC50W Datasheet (PDF) Download
IRF
IRG4PC50W

Key Features

  • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications
  • Industry-benchmark switching losses improve efficiency of all power supply topologies
  • 50% reduction of Eoff parameter
  • Low IGBT conduction losses
  • Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability C VCES = 600V G E VCE(on) max. = 2.30V @VGE = 15V, IC = 27A n-channel Benefits
  • Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz ("hard switched" mode)
  • Of particular benefit to single-ended converters and boost PFC topologies 150W and higher
  • Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >300 kHz) TO-247AC