IRG4BC20SD-S
IRG4BC20SD-S is INSULATED GATE BIPOLAR TRANSISTOR manufactured by IRF.
PD -91794
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
- Extremely low voltage drop 1.4Vtyp. @ 10A
- S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives.
- Very Tight Vce(on) distribution
- IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
- Industry standard D2Pak package
Standard Speed IGBT
VCES = 600V
VCE(on) typ. = 1.4V
@VGE = 15V, IC = 10A n-cha nnel
Benefits
- Generation 4 IGBT's offer highest efficiencies available
- IGBT's optimized for specific application conditions
- HEXFRED diodes...
