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IRFSL4310 - HEXFET Power MOSFET

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Features

  • ature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as neither Tjmax nor Iav (max) is exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed.

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Datasheet Details

Part number IRFSL4310
Manufacturer IRF
File Size 343.98 KB
Description HEXFET Power MOSFET
Datasheet download datasheet IRFSL4310 Datasheet
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Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Worldwide Best RDS(on) in TO-220 l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability G PD - 96894A IRFB4310 IRFS4310 IRFSL4310 HEXFET® Power MOSFET D VDSS RDS(on) typ. max. S ID 51.60m0V: 7.
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