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IRFP254N - Power MOSFET

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • 0.25 (.010) M 3.40 (.133) 3.00 (.118) C A S 0.80 (.031) 3X 0.40 (.016) 2.60 (.102) 2.20 (.087) TO-247AC Part Marking Information.

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Datasheet Details

Part number IRFP254N
Manufacturer IRF
File Size 222.26 KB
Description Power MOSFET
Datasheet download datasheet IRFP254N Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 94213 IRFP254N HEXFET® Power MOSFET l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements D VDSS = 250V RDS(on) = 125mΩ G S ID = 23A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices.
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