SJTU07N60C - Super-Junction MOSFET

IPS

Key Features

RoHS Compliant.
Low ON Resistance.
Low Gate Charge.
Peak Current vs Pulse Width Curve.
Inductive Switching Curves Ordering Information PART NUMBER.

SJTU07N60C super-junction mosfet by IPS - Datasheet Preview

Datasheet Details

Part number	SJTU07N60C
Manufacturer	IPS
File Size	1.02 MB
Description	Super-Junction MOSFET
Datasheet	SJTU07N60C Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
SJT4793NF	NPN SILICON TRANSISTOR	Silan Microelectronics
SJT688APPN	PNP SILICON TRANSISTOR	Silan Microelectronics
SJT8003	Single Channel DC LED lighting touch controller	Soujet
SJT8005	5-Channel Capacitive Touch Sensor	Soujet

Other Datasheets by IPS

Part Number	Description
SJTU07N70C	Super-Junction MOSFET
SJTU04N65C	Super-Junction MOSFET
SJTU04N70C	Super-Junction MOSFET
SJTU05N60C	Super-Junction MOSFET
SJTU06N70C	Super-Junction MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

SJTU07N60C Super-Junction MOSFET Applications: ● Adaptor ● Charger ● SMPS VDSS 600V Lead Free Package and Finish RDS(ON)(Typ.) 0.63Ω ID 7A Features: ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ● Peak Current vs Pulse Width Curve ● Inductive Switching Curves Ordering Information PART NUMBER PACKAGE SJTU07N60C TO-251 BRAND IPS Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter SJTU07N60C VDSS ID IDM Drain-to-Source Voltage Continuous Drain Current Pulsed Drain Current, VGS@10V (NOTE *1) 600 7 21 Power Dissipation PD Derating Factor above 25℃ 83 0.67 VGS Gate-to-Source Voltage EAS Single Pulse Avalanche Energy(NOTE *2) ±30 20 EAR Avalanche Energy ,Repetitive (NOTE *1) 0.