Datasheet4U Logo Datasheet4U.com

SJTD11N65C - Super-Junction MOSFET

Key Features

  • RoHS Compliant.
  • Low ON Resistance.
  • Low Gate Charge.
  • Peak Current vs Pulse Width Curve.
  • Inductive Switching Curves Ordering Information PART NUMBER.

📥 Download Datasheet

Datasheet Details

Part number SJTD11N65C
Manufacturer IPS
File Size 1.03 MB
Description Super-Junction MOSFET
Datasheet download datasheet SJTD11N65C Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SJT4793NF NPN SILICON TRANSISTOR Silan Microelectronics
SJT688APPN PNP SILICON TRANSISTOR Silan Microelectronics
SJT8003 Single Channel DC LED lighting touch controller Soujet
SJT8005 5-Channel Capacitive Touch Sensor Soujet

Other Datasheets by IPS

Part Number Description
SJTD04N65C Super-Junction MOSFET
SJTD05N60C Super-Junction MOSFET
SJTD06N70C Super-Junction MOSFET
SJTD07N60C Super-Junction MOSFET
SJTD07N70C Super-Junction MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SJTD11N65C Super-Junction MOSFET Applications: ● Adaptor ● Charger ● SMPS VDSS 650V Lead Free Package and Finish RDS(ON)(Typ.) 0.34Ω ID 11A Features: ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ● Peak Current vs Pulse Width Curve ● Inductive Switching Curves Ordering Information PART NUMBER PACKAGE SJTD11N65C TO-252 BRAND IPS Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter SJTD11N65C VDSS ID IDM Drain-to-Source Voltage Continuous Drain Current Pulsed Drain Current, VGS@10V (NOTE *2) 650 11 33 Power Dissipation PD Derating Factor above 25℃ 83.3 0.67 VGS Gate-to-Source Voltage EAS Single Pulse Avalanche Energy(L=10mH) ±30 240 EAR Avalanche Energy ,Repetitive (NOTE *2) 0.