Datasheet4U Logo Datasheet4U.com

SJTD08N65C - Super-Junction MOSFET

Features

  • RoHS Compliant.
  • Low ON Resistance.
  • Low Gate Charge.
  • Peak Current vs Pulse Width Curve.
  • Inductive Switching Curves Ordering Information PART NUMBER.

📥 Download Datasheet

Datasheet Details

Part number SJTD08N65C
Manufacturer IPS
File Size 317.60 KB
Description Super-Junction MOSFET
Datasheet download datasheet SJTD08N65C Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SJT4793NF NPN SILICON TRANSISTOR Silan Microelectronics
SJT688APPN PNP SILICON TRANSISTOR Silan Microelectronics
SJT8003 Single Channel DC LED lighting touch controller Soujet
SJT8005 5-Channel Capacitive Touch Sensor Soujet

Other Datasheets by IPS

Part Number Description
SJTD08N60C Super-Junction MOSFET
SJTD04N65C Super-Junction MOSFET
SJTD05N60C Super-Junction MOSFET
SJTD06N70C Super-Junction MOSFET
SJTD07N60C Super-Junction MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SJTD08N65C Super-Junction MOSFET Applications: ● Adaptor ● Charger ● SMPS VDSS 650V Lead Free Package and Finish RDS(ON)(Typ.) 0.56Ω ID 8A Features: ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ● Peak Current vs Pulse Width Curve ● Inductive Switching Curves Ordering Information PART NUMBER PACKAGE SJTD08N65C TO-252 BRAND IPS Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter SJTD08N65C VDSS Drain-to-Source Voltage 650 ID Continuous Drain Current 8 IDM Pulsed Drain Current, VGS@10V (NOTE *2) 24 Power Dissipation PD Derating Factor above 25℃ 63 0.5 VGS Gate-to-Source Voltage ±30 EAS Single Pulse Avalanche Energy 162 EAR Avalanche Energy ,Repetitive (NOTE *2) 0.2 IAR Avalanche Current (NOTE *2) 1.
Published: |