SJTD07N60C - Super-Junction MOSFET

IPS

Key Features

RoHS Compliant.
Low ON Resistance.
Low Gate Charge.
Peak Current vs Pulse Width Curve.
Inductive Switching Curves Ordering Information PART NUMBER.

SJTD07N60C super-junction mosfet by IPS - Datasheet Preview

Datasheet Details

Part number	SJTD07N60C
Manufacturer	IPS
File Size	466.43 KB
Description	Super-Junction MOSFET
Datasheet	SJTD07N60C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SJTD07N60C Super-Junction MOSFET Applications: ● Adaptor ● Charger ● SMPS VDSS 600V Lead Free Package and Finish RDS(ON)(Typ.) 0.63Ω ID 7A Features: ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ● Peak Current vs Pulse Width Curve ● Inductive Switching Curves Ordering Information PART NUMBER PACKAGE SJTD07N60C TO-252 BRAND IPS Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter SJTD07N60C VDSS ID IDM Drain-to-Source Voltage Continuous Drain Current Pulsed Drain Current, VGS@10V (NOTE *1) 600 7 21 Power Dissipation PD Derating Factor above 25℃ 83 0.67 VGS Gate-to-Source Voltage EAS Single Pulse Avalanche Energy(NOTE *2) ±30 20 EAR Avalanche Energy ,Repetitive (NOTE *1) 0.