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SJTD05N60C - Super-Junction MOSFET

Features

  • RoHS Compliant.
  • Low ON Resistance.
  • Low Gate Charge.
  • Peak Current vs Pulse Width Curve.
  • Inductive Switching Curves Ordering Information PART NUMBER.

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Datasheet Details

Part number SJTD05N60C
Manufacturer IPS
File Size 1.00 MB
Description Super-Junction MOSFET
Datasheet download datasheet SJTD05N60C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SJTD05N60C Super-Junction MOSFET Applications: ● Adaptor ● Charger ● SMPS VDSS 600V Lead Free Package and Finish RDS(ON)(Typ.) 0.72Ω ID 5A Features: ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ● Peak Current vs Pulse Width Curve ● Inductive Switching Curves Ordering Information PART NUMBER PACKAGE SJTD05N60C TO-252 BRAND IPS Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter SJTD05N60C VDSS ID IDM Drain-to-Source Voltage Continuous Drain Current Pulsed Drain Current, VGS@10V (NOTE *1) 600 5 15 Power Dissipation PD Derating Factor above 25℃ 36.8 0.29 VGS Gate-to-Source Voltage EAS Single Pulse Avalanche Energy(NOTE *2) ±30 120 EAR Avalanche Energy ,Repetitive (NOTE *1) 0.
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