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FTP14N50C Datasheet Preview

FTP14N50C Datasheet

N-Channel MOSFET

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N-Channel MOSFET
Applications:
• Adaptor
• TV Main Power
• LCD Panel Power
FTP14N50C
FTA14N50C
Pb Lead Free Package and Finish
VDSS
500V
RDS(ON) (Max.)
0.46 Ω
ID
14 A
Features:
• RoHS Compliant
• Low ON Resistance
• Low Gate Charge
Ordering Information
PART NUMBER
FTP14N50C
FTA14N50C
PACKAGE
TO-220
TO-220F
BRAND
FTP14N50C
FTA14N50C
GDS
TO-220 G DS
TO-220F
Packages
Not to Scale
G
D
S
Absolute Maximum Ratings TC=25 oC unless otherwise specified
Symbol
Parameter
FTP14N50C FTA14N50C
Units
VDSS
ID
ID@ 100 oC
IDM
PD
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current, VGS@ 10V
Power Dissipation
Derating Factor above 25 oC
(NOTE *1)
(NOTE *2)
500
14.0 14.0*
8.50
56
188 50
1.52 0.40
V
A
W
W/ oC
VGS
EAS
IAS
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Engergy
L=1 mH, ID=21 Amps
Pulsed Avalanche Rating
Peak Diode Recovery dv/dt
(NOTE *3)
± 30
225
Figure 8
3.0
V
mJ
A
V/ ns
TL
TPKG
TJ and TSTG
Maximum Temperature for Soldering
Leads at 0.063 in (1.6 mm) from Case for 10 seconds
Package Body for 10 seconds
Operating Junction and Storage
Temperature Range
300
260
-55 to 150
oC
* Drain Current Limited by Maximum Junction Temperature
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device.
Thermal Resistance
Symbol
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient
FTP14N50C FTA14N50C Units
0.66
62
2.5
100 oC/W
Test Conditions
Drain lead soldered to water cooled heatsink, PD ad-
justed for a peak junction temperature of +150 oC.
1 cubic foot chamber, free air.
©2009 InPower Semiconductor Co., Ltd.
Page 1 of 4
FTP14N50C/FTA14N50C Preliminary Mar. 2009




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FTP14N50C Datasheet Preview

FTP14N50C Datasheet

N-Channel MOSFET

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OFF Characteristics TJ=25 oC unless otherwise specified
Symbol
Parameter
Min. Typ.
BVDSS
ΔBVDSS/Δ TJ
Drain-to-Source Breakdown Voltage
BreakdownVoltage Temperature
Coefficient, Figure 11.
500 --
-- 0.631
Max.
--
--
-- -- 25
IDSS Drain-to-Source Leakage Current
-- -- 250
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
-- -- 100
-- -- -100
Units
V
V/ oC
µA
nA
Test Conditions
VGS=0V, ID=250µA
Reference to 25 oC,
ID=250 µA
VDS=500V, VGS=0V
VDS=400V, VGS=0V
TJ=125 oC
VGS=+30 V
VGS= -30V
ON Characteristics TJ=25 oC unless otherwise specified
Symbol
Parameter
Min. Typ.
RDS(ON)
VGS(TH)
Static Drain-to-Source On-Resistance
Figure 9 and 10.
--
0.4
Gate Threshold Voltage, Figure 12.
2.0 --
gfs Forward Transconductance
-- 6.8
Max.
0.46
4.0
--
Units
Ω
V
S
Test Conditions
VGS=10V, ID=7.0A
(NOTE *4)
VDS=VGS, ID=250μA
VDS=15V, ID=14A
(NOTE *4)
Dynamic Characteristics Essentially independent of operating temperature
Symbol
Ciss
Coss
Crss
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
--
--
--
Typ.
2129
180
18
Max.
--
--
--
Units
pF
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain (“Miller”) Charge
-- 41 --
-- 11 --
-- 16 --
nC
Test Conditions
VGS=0 V
VDS=25 V
f =1.0MHz
VDD=250V
ID=14A
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
trise
td(OFF)
tfall
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Essentially independent of operating temperature
Min. Typ. Max. Units
Test Conditions
-- 16 --
-- 30 --
-- 52 --
-- 36 --
ns
VDD=250V
ID=14A
VGS=10 V
RG=10 Ω
©2009 InPower Semiconductor Co., Ltd.
Page 2 of 4
FTP14N50C/FTA14N50C Preliminary Mar. 2009


Part Number FTP14N50C
Description N-Channel MOSFET
Maker IPS
Total Page 4 Pages
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