Datasheet4U Logo Datasheet4U.com

IRFP9150 - P-Channel Power MOSFET

Key Features

  • 25A, 100V.
  • rDS(ON) = 0.150Ω.
  • Single Pulse Avalanche Energy Rated.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance Symbol D Ordering Information PART NUMBER IRFP9150.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRFP9130 P-CHANNEL POWER MOSFETS Samsung
IRFP9131 P-CHANNEL POWER MOSFETS Samsung
IRFP9132 P-CHANNEL POWER MOSFETS Samsung
IRFP9133 P-CHANNEL POWER MOSFETS Samsung
IRFP9140 (IRF9140 - IRF9143) P-Channel Power MOSFETs Samsung Electronics

Other Datasheets by Intersil (Renesas)

Part Number Description
IRFP9140 P-Channel Power MOSFET
IRFP9240 Power MOSFET
IRFR9024 P Channel Power MOSFET
IRFR9110 P Channel Power MOSFET
IRFR9120 P Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IRFP9150 Data Sheet August 1999 File Number 2293.4 25A, 100V, 0.150 Ohm, P-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. It is a P-Channel enhancement mode silicon-gate power field effect transistor designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. The P-Channel IRFP9150 is an approximate electrical complement to the N-channel IRFP150. Formerly developmental type TA49230. Features • 25A, 100V • rDS(ON) = 0.