BSC520N15NS3G - 150V MOSFET

Description

Features

Optimized for dc-dc conversion.
N-channel, normal level.
Excellent gate charge x RDS(on) product (FOM).
Very low on-resistance RDS(on).
150 °C operating temperature.
Pb-free lead plating; RoHS compliant;.
Qualified according to JEDEC1) for target.

INFINEON

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Datasheet Details

Part number	BSC520N15NS3G
Manufacturer	Infineon
File Size	1.12 MB
Description	150V MOSFET
Datasheet	BSC520N15NS3G Datasheet
Additional preview pages of the BSC520N15NS3G datasheet.

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BSC520N15NS3G MOSFET OptiMOSª3Power-Transistor,150V Features •Optimizedfordc-dcconversion •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •150°Coperatingtemperature •Pb-freeleadplating;RoHScompliant; •QualifiedaccordingtoJEDEC1)fortargetapplication •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 150 V RDS(on),max 52 mΩ ID 21 A SuperSO8 8 7 65 56 78 1 23 4 4321 Drain Pin 5-8 Gate *1 Pin 4 Source *1: Internal body diode Pin 1-3 Type/OrderingCode BSC520N15NS3 G Package PG-TDSON-8 Marking 520N15NS RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.

Published: Feb 12, 2013 |