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UPA805T - NPN Transistor

Description

With SOT-363 packaging Low voltage use Ultra super mini mold package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low noise and small signal amplifiers from VHF band to UHF band ABSOLUTE MAXIMUM RATINGS(

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isc Silicon NPN RF Transistor DESCRIPTION ·With SOT-363 packaging ·Low voltage use ·Ultra super mini mold package ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low noise and small signal amplifiers from VHF band to UHF band ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 9 UNIT V VCEO Collector-Emitter Voltage 6 V VEBO Emitter-Base Voltage 2 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Max.Junction Temperature 10 mA 120 mW 150 ℃ Tstg Storage Temperature Range -60~150 ℃ UPA805T isc website：www.iscsemi.
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