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TTA0002 Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

General Description

·Low Collector Saturation Voltage ·Good Linearity of hFE ·Complement to Type TTC0002 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -18 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -9 A 180 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ TTA0002 isc website: www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor TTA0002 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ;

IB= 0 -160 V VCE(sat) Collector-Emitter Saturation Voltage IC= -9A;

Overview

isc Silicon PNP Power Transistor.