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TTA0001 - PNP Transistor

Description

Low Collector Saturation Voltage Good Linearity of hFE Complement to Type TTC0001 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 100W high fidelity audio frequency amplifier out

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isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage ·Good Linearity of hFE ·Complement to Type TTC0001 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -18 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -9 A 150 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ TTA0001 isc website： www.iscsemi.
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