TK65E10N1 mosfet equivalent, n-channel mosfet.
*Low drain-source on-resistance:
RDS(on) ≤4.8mΩ. (VGS = 10 V)
*Enhancement mode:
Vth =2.0 to 4.0V (VDS = 10 V, ID=1.0mA)
*100% avalanche tested
*Minimum L.
of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for .
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