Datasheet4U Logo Datasheet4U.com

TK40A10N1 - N-Channel MOSFET

Features

  • br>.
  • Low drain-source on-resistance: RDS(ON) = 8.2mΩ (VGS = 10 V).
  • Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.5mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TK40A10N1 Silicon N-Channel MOSFET Toshiba Semiconductor
TK40A10J1 MOSFET Toshiba Semiconductor
TK40A10K3 Field Effect Transistor Toshiba Semiconductor
TK40A06N1 Silicon N-Channel MOSFET Toshiba Semiconductor
TK40A08K3 MOSFET Toshiba Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number Description
TK40A06N1 N-Channel MOSFET
TK40E06N1 N-Channel MOSFET
TK40E10N1 N-Channel MOSFET
TK40J60U N-Channel MOSFET
TK42A12N1 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK40A10N1，ITK40A10N1 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 8.2mΩ (VGS = 10 V) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.5mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 40 IDM Drain Current-Single Pulsed 171 PD Total Dissipation @TC=25℃ 35 Tj Max.
Published: |