TK31N60W - N-Channel MOSFET

Inchange Semiconductor

Features

With TO-247 packaging.
Easy to use.
High speed switching.
Very high commutation ruggedness.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

TK31N60W n-channel mosfet by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	TK31N60W
Manufacturer	Inchange Semiconductor
File Size	208.94 KB
Description	N-Channel MOSFET
Datasheet	TK31N60W Datasheet

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK31N60W ·FEATURES ·With TO-247 packaging ·Easy to use ·High speed switching ·Very high commutation ruggedness ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·PFC stages ·LCD & PDP TV ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 30.8 IDM Drain Current-Single Pulsed 123 PD Total Dissipation 230 Tch Max.