TJ9A10M3 mosfet equivalent, n-channel mosfet.
*Low drain-source on-resistance:
RDS(on) ≤0.17Ω. (VGS = -10 V)
*Enhancement mode:
Vth = -2.0 to -4.0V (VDS = -10 V, ID=-1mA)
*100% avalanche tested
*Minim.
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