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TIP55A - NPN Transistor

Description

50W at 100℃ case temperature 10A peak collector current High-voltage,high forward and reverse energy 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for automotive ignition and switching reg

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isc Silicon NPN Power Transistors TIP55A DESCRIPTION ·50W at 100℃ case temperature ·10A peak collector current ·High-voltage,high forward and reverse energy ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for automotive ignition and switching regulator applications ·Characterized for operation in ignition and switching regulator Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 8 V IC Collector Current -Continuous 7.
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