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TIP31 - NPN Transistor

Description

Collector-Emitter Saturation Voltage- : VCE(sat) = 1.2V(Max.)@IC= 3A Collector-Emitter Breakdown Voltage- : V(BR) CEO= 40V(Min) Complement to Type TIP32 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in gener

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isc Silicon NPN Power Transistors INCHANGE Semiconductor TIP31 DESCRIPTION ·Collector-Emitter Saturation Voltage- : VCE(sat) = 1.2V(Max.)@IC= 3A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 40V(Min) ·Complement to Type TIP32 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifier and switching applications.
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