STP25N10F7 mosfet equivalent, n-channel mosfet.
*Drain Current
–ID= 25A@ TC=25℃
*Drain Source Voltage-
: VDSS= 100V(Min)
*Static Drain-Source On-Resistance
: RDS(on) = 0.035Ω(Max)
*100% .
*Switching application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS
Gate-S.
*These devices utilize the 7th generation of design rules of ST
Proprietary,with a new gate structure.
*Low Drain-Source On-Resistance
APPLICATIONS
*Switching application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-.
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