STB22NM60N mosfet equivalent, n-channel mosfet.
*Low input capacitance and gate charge
*Low gate input resistances
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and.
*Switching applications
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source V.
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