Datasheet4U Logo Datasheet4U.com

SPW47N60CFD - N-Channel MOSFET

Features

  • Static drain-source on-resistance: RDS(on)≤83mΩ.
  • Enhancement mode:.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SPW47N60CFD CoolMOS Power Transistor Infineon Technologies
SPW47N60C2 Cool MOS Power Transistor Infineon Technologies
SPW47N60C3 Cool MOS Power Transistor Infineon Technologies
SPW47N60S5 Cool MOS Power Transistor Infineon Technologies
SPW47N65C3 Power Transistor Infineon Technologies

Other Datasheets by Inchange Semiconductor

Part Number Description
SPW47N60C3 N-Channel MOSFET
SPW47N65C3 N-Channel MOSFET
SPW11N60C3 N-Channel MOSFET
SPW11N60CFD N-Channel MOSFET
SPW11N60S5 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPW47N60CFD ISPW47N60CFD ·FEATURES ·Static drain-source on-resistance: RDS(on)≤83mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Peak Current Capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 46 IDM Drain Current-Single Pulsed 115 PD Total Dissipation @TC=25℃ 417 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 0.
Published: |