SPW20N60CFD mosfet equivalent, n-channel mosfet.
*Static drain-source on-resistance:
RDS(on)≤220mΩ
*Enhancement mode:
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance a.
of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for .
*High peak current capability
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
20.7
IDM
Drain Current-Single Pulsed
52
PD
Total Di.
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