SPP80P06P mosfet equivalent, p-channel mosfet.
*Static drain-source on-resistance:
RDS(on)≤0.023Ω
*Enhancement mode:
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance .
of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for .
*175℃ operating temperature
*Avalanche rated
*dv/dt rated
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
-60
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
-80
IDM
Drain Curr.
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