SPP24N60C3 datasheet, mosfet equivalent, INCHANGE

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Features and benefits

*Static drain-source on-resistance: RDS(on) ≤0.16Ω
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for r.

Application

of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for .

Description

* Ultra low gate charge
* Ultra low effective capacitance
* Improved transconductance
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Cont.

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