*Static drain-source on-resistance: RDS(on)≤0.24Ω
*Enhancement mode:
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance a.

*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -100 VGS Gate-Source Vo.

*Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and reliable device for use in a wide variety of applications.
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE .

SPP15P10PH

SPP15N60C3

SPP15N60CFD

SPP15N65C3

SPP100N03S2-03

SPP100N03S2L-03

SPP100N04S2-04

SPP100N04S2L-03

SPP100N06S2-05

SPP100N06S2L-05

SPP100N08S2-07

SPP100N08S2L-07

SPP1013

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