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SPP04N60C3 Datasheet, INCHANGE

SPP04N60C3 mosfet equivalent, to-220c n-channel mosfet.

SPP04N60C3 Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 243.55KB)

SPP04N60C3 Datasheet

Features and benefits


*Static drain-source on-resistance: RDS(on) ≤0.95Ω
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for r.

Application

of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for .

Description


*Ultra low gate charge
*High peak current capability
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 4.5 IDM Drain Current-Singl.

Image gallery

SPP04N60C3 Page 1 SPP04N60C3 Page 2

TAGS

SPP04N60C3
TO-220C
N-Channel
MOSFET
INCHANGE

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