Datasheet4U Logo Datasheet4U.com
Inchange Semiconductor logo

R6030ENZ Datasheet

Manufacturer: Inchange Semiconductor
R6030ENZ datasheet preview

R6030ENZ Details

Part number R6030ENZ
Datasheet R6030ENZ-INCHANGE.pdf
File Size 260.97 KB
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET
R6030ENZ page 2

R6030ENZ Overview

·Designed for use in switch mode power supplies and general purpose applications. RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 30 A IDM Drain Current-Single Pluse 80 A PD Total Dissipation @TC=25℃ 120 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL...

R6030ENZ Key Features

  • Drain Current -ID= 30A@ TC=25℃ -Drain Source Voltage

Similar Datasheets

Brand Logo Part Number Description Manufacturer
ROHM Logo R6030ENZ Power MOSFET ROHM
ROHM Logo R6030ENZ1 Power MOSFET ROHM
ROHM Logo R6030ENX Power MOSFET ROHM

R6030ENZ Distributor

Inchange Semiconductor Datasheets

More from Inchange Semiconductor

Datasheet4U Logo
Since 2006. D4U Semicon. About Datasheet4U Contact Us Privacy Policy Purchase of parts