R6030ENX N-Channel MOSFET
•Drain Current
–ID= 30A@ TC=25℃
•Drain Source Voltage-
: VDSS=600V(Min)
•Static Drain-Source On-Resistance
: RDS(on) = 130mΩ(Max)
•100% av.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source .
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