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R6030ENX

R6030ENX is N-Channel MOSFET manufactured by Inchange Semiconductor.
R6030ENX datasheet preview

R6030ENX Datasheet

Part number R6030ENX
Download R6030ENX Datasheet PDF
File Size 247.50 KB
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET
R6030ENX page 2

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All R6030ENX datasheets

R6030ENX Description

·Designed for use in switch mode power supplies and general purpose applications. RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 30 A IDM Drain Current-Single Pluse 80 A PD Total Dissipation @TC=25℃ 86 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL...

R6030ENX Key Features

  • Drain Current -ID= 30A@ TC=25℃ -Drain Source Voltage
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