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PSMN130-200D Datasheet Preview

PSMN130-200D Datasheet

N-Channel MOSFET

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Isc N-Channel MOSFET Transistor
PSMN130-200D
·FEATURES
·With To-252(DPAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
200
VGSS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
20
IDM
Drain Current-Single Pulsed
80
PD
Total Dissipation @TC=25
150
Tch
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT
V
V
A
A
W
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX
1.0
50
UNIT
/W
/W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark




INCHANGE

PSMN130-200D Datasheet Preview

PSMN130-200D Datasheet

N-Channel MOSFET

No Preview Available !

Isc N-Channel MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=1.0mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=25A
IGSS
Gate-Source Leakage Current
VGS= ±10V;VDS= 0V
IDSS
Drain-Source Leakage Current VDS=150V; VGS= 0V
VSDF
Diode forward voltage
ISD=25A, VGS = 0 V
PSMN130-200D
MIN TYP MAX UNIT
200
V
2.0
4.0
V
120 130
mΩ
±0.1 μA
10
μA
1.2
V
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark


Part Number PSMN130-200D
Description N-Channel MOSFET
Maker INCHANGE
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