Datasheet Details
| Part number | PRF957 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.72 KB |
| Description | NPN Transistor |
| Datasheet |
 PRF957 Datasheet
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| Part number | PRF957 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.72 KB |
| Description | NPN Transistor |
| Datasheet |
PRF957 Datasheet
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·Low Noise NF = 1.5 dB TYP., @VCE = 6V, IC = 30 mA, f = 1 GHz ·High Gain ︱S21e︱2 = 12 dB TYP.
@VCE = 6V, IC = 30 mA, f = 1.0 GHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for VHF, UHF low noise amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 1.5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 100 mA 270 150 ℃ Tstg Storage Temperature Range -65~150 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor INCHANGE Semiconductor PRF957 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS ICBO Collector Cutoff Current VCB= 10V;
isc Silicon NPN RF Transistor INCHANGE Semiconductor PRF957.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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PRF957 | UHF wideband transistor | Philips |
| Part Number | Description |
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