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PHP30NQ15T Datasheet Preview

PHP30NQ15T Datasheet

N-Channel MOSFET

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isc N-Channel MOSFET Transistor
PHP30NQ15T
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤ 63m
·Low thermal resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATION
·DC/DC Converter
·Ideal for high-frequency switching and synchronous rectification
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
150
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
29
IDM
Drain Current-Single Pulsed
116
PD
Total Dissipation @TC=25
150
Tj
Operating Junction Temperature
-55~175
Tstg
Storage Temperature
-55~175
UNIT
V
V
A
A
W
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c)
Junction-to-case thermal resistance
MAX
1
UNIT
/W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark




INCHANGE

PHP30NQ15T Datasheet Preview

PHP30NQ15T Datasheet

N-Channel MOSFET

No Preview Available !

isc N-Channel MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS Drain-Source Breakdown Voltage VGS= 0V; ID = 250μA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID = 1mA
RDS(on) Drain-Source On-Resistance
VGS=10V; ID= 40A
IGSS
Gate-Source Leakage Current
VGS= ±10V;VDS= 0V
IDSS
Drain-Source Leakage Current
VDS= 150V; VGS= 0V
VSD
Diode forward voltage
IS= 25A; VGS = 0V
PHP30NQ15T
MIN TYP MAX UNIT
150
V
2
4
V
63
mΩ
±100 nA
10
μA
1.2
V
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark


Part Number PHP30NQ15T
Description N-Channel MOSFET
Maker INCHANGE
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