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PHP30NQ15T - N-Channel MOSFET

Features

  • Static drain-source on-resistance: RDS(on) ≤ 63mΩ.
  • Low thermal resistance.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor PHP30NQ15T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 63mΩ ·Low thermal resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 150 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 29 IDM Drain Current-Single Pulsed 116 PD Total Dissipation @TC=25℃ 150 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance MAX 1 UNIT ℃/W isc website：www.
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