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NVD5C648NL - N-Channel MOSFET

Key Features

  • Drain Current.
  • ID= 89A@ TC=25℃.
  • Drain Source Voltage- VDSS= 60V(Min).
  • Static Drain-Source On-Resistance RDS(on) :4.1mΩ(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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isc N-Channel MOSFET Transistor NVD5C648NL FEATURES ·Drain Current –ID= 89A@ TC=25℃ ·Drain Source Voltage- VDSS= 60V(Min) ·Static Drain-Source On-Resistance RDS(on) :4.1mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 89 A IDM Drain Current-Single Pluse 510 A PD Total Dissipation @TC=25℃ 72 W TJ Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.07 ℃/W isc website：www.iscsemi.