Datasheet4U Logo Datasheet4U.com

MUR860F - Ultrafast Recovery Rectifier

Features

  • Ultrafast Recovery Time.
  • Low Forward Voltage.
  • Low Leakage Current.
  • 150℃ Operating Junction Temperature.
  • 100% tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MUR860F Glass passivated super fast rectifier First Silicon
MUR860F Ultra Fast Recover diode GOOD-ARK
MUR860F Ultra-Fast Recovery Diode Yangzhou Yangjie
MUR860FCT Glass Passivated Super Fast Rectifiers First Silicon
MUR860FL Ultra-Fast Recovery Diode Yangzhou Yangjie

Other Datasheets by Inchange Semiconductor

Part Number Description
MUR860 Ultrafast Rectifier
MUR860G Ultrafast Rectifier
MUR8100D Ultrafast Recovery Rectifier
MUR8100E Ultrafast Recovery Rectifier
MUR8120 Ultrafast Rectifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Ultrafast Recovery Rectifier INCHANGE Semiconductor MUR860F FEATURES ·Ultrafast Recovery Time ·Low Forward Voltage ·Low Leakage Current ·150℃ Operating Junction Temperature ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power supplies ·Power switching circuits ·General purpose ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR IF(AV) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) 600 V 8 A IFRM Peak Repetitive Forward Current (Rated VR,Square Wave,20kHz) 16 A Nonrepetitive Peak Surge Current IFSM (Surge applied at rated load conditions 100 A half-wave, single phase, 60Hz) TJ Junction Temperat
Published: |