MJE3055T transistor equivalent, npn transistor.
*Designed for use in general-purpose amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL.
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 60V(Min)
*High DC Current Gain-
: hFE= 20-100@IC= 4A
*Complement to Type MJE2955T
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
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