MJE13070 transistors equivalent, silicon npn power transistors.
*Designed for high-voltage, high-speed, power switching in
inductive circuits, where fall time is critical.They are .
*Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 400V(Min)- MJE13070 = 450V(Min)- MJE13071
* Collector-Emitter Saturation Voltage: VCE(sat) = 3.0V(Min)@IC= 5A
*Minimum Lot-to-Lot variations for robust device performance and reliable o.
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