*Designed for use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATIN.

*Built-in Base-Emitter Shunt Resistors
*High DC current gain hFE = 1000 (Min) @ IC = 5A
*Collector-Emitter Breakdown Voltage V(BR)CEO= 60V(Min)
*Complement to PNP type MJ2500
*Minimum Lot-to-Lot variations for robust device perfor.

MJ3001

MJ3041

MJ3055

MJ3101

MJ3202

MJ3281A

MJ3738

MJ3771

MJ3772

MJ3773

MJ-065M

MJ-10

MJ-11

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts