*Designed for use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATIN.

*Built-in Base-Emitter Shunt Resistors
*High DC current gain- hFE = 1000 (Min) @ IC = -5A
*Collector-Emitter Breakdown Voltage- V(BR)CEO= -80V(Min)
*Minimum Lot-to-Lot variations for robust device performance and reliable operation A.

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