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MJ15024G - NPN Transistor

Description

Complement to Type PNP MJ15025 Excellent Safe Operating Area High DC current Gain Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power audio, disk head positioners and other linear applications ABSOLUTE MAX

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isc Silicon NPN Power Transistors MJ15024G DESCRIPTION ·Complement to Type PNP MJ15025 ·Excellent Safe Operating Area ·High DC current Gain ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio, disk head positioners and other linear applications ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage 400 V 250 V 5 V IC Collector Current-Continuous ICM Collector Current-Peak (1) IB Base Current-Continuous 16 A 30 A 5 A PD Total Power Dissipation @TC=25℃ 250 W Tj Junction Temperature -65~200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Res